FDN359AN
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN359AN
Datasheet:
Description:
MOSFETs SuperSOT-3 SMD/SMT N-Channel number of channels:1 500 mW 30 V Continuous Drain Current (ID):2.7 A 7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 2.92 mm |
| Width | 3.05 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 46 mΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 2.7 A |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 1.6 V |
| Number of Channels | 1 |
| Input capacitance | 480 pF |
| Continuous Drain Current (ID) | 2.7 A |
| Rds On Max | 46 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Fall Time | 13 ns |
| Rise Time | 13 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 37 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.6 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 10069
Distributors
pcbx
pcbxUnit Price$0.41293
Ext.Price$0.41293
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.41293 | $0.41293 |
| 10 | $0.27785 | $2.77850 |
| 50 | $0.22652 | $11.32600 |
| 100 | $0.18467 | $18.46700 |
| 500 | $0.14106 | $70.53000 |
| 1000 | $0.12653 | $126.53000 |
| 3000 | $0.09404 | $282.12000 |
| 5000 | $0.08849 | $442.45000 |
| 10000 | $0.08327 | $832.70000 |